Ing Ind - Inf (Mag.)(ord. 270) - MI (486) ENGINEERING PHYSICS - INGEGNERIA FISICA
097512 - PHYSICS OF SEMICONDUCTOR NANOSTRUCTURES [I.C.]
097604 - PHYSICS OF SEMICONDUCTORS
The aim of this course is to describe some relevant aspects on the Physics of semiconductor devices and the limitations of them.
In particular, the characteristics of the more important semiconductor crystal structures will be presented. Some deposition techniques will be given, as well as information about the more common commercial substrates. In addition, some concepts on the diffusion of impurities and semiconductor alloys will be covered. Several kind of crystalline defects will be presented for the more relevant semiconductor families. As well as, defects associated to the interfaces wil be also studied. Finally, properties and characteristics of transparent oxides and semiconductors will presented taking into account the current and upcoming applications.
Risultati di apprendimento attesi
Knowledge and understanding: Students will learn how to choose semiconductors in terms of their structures and manufacturing techniques and commercial availability.
Apply knowledge and understanding: Students will be able to evaluate the limitations and adaptation of semiconductors in terms of defects and impurities.
Making Judgements: Given a specific application, students will have the ability to recognize the characteristics necessary to choose a semiconductor system adapted in terms of limitations and beneficial characteristics.
Lifelong learning skills: Students will be able to learn autonomously the new trends of traditional semiconductors, as well as the current and future applications of semiconductors and transparent oxides.
Defects in semiconductors Defects. Point defects: vacancies, Interstitials and substitutional atoms. Impurities. Experimental determinations. Dislocations: Burger vector, dislocation geometry (edge, screw, mixed, partial). Extended defects. Disorder. Shallow defects (Si, Ge and GaAs). Deep defects (Negative-U Center, EL2, DX). Jahn–Teller Effect. Surface charges and dipoles. Defects associated to the interfaces. Non-ideal p-n junction and metal/semiconductor interface (Schottky barrier).
Crystal structures and defects in transparent semiconductors Structure, defects and properties of transparent oxides and semiconductors (GaN, ZnO and TiO2). Amorphous films (IGZO). Current and upcoming applications: TFT transistors, displays, solar cells, etc.
The student will benefit of a background knowledge of solid state Physics and quantum mechanics.
Modalità di valutazione
Students will be evaluated by means of oral examination.
The oral exam is aimed at assessing the capability of the student to:
-describe semiconductor structures and fabrication methods;
-discuss the limitations and tailoring of the semiconductors in term of defects and impurities;
-be aware of new applications of semiconductors, as well as of current and upcoming applications of transparent semiconductors and oxides.
Peter Y. Yu and Manuel Cardona, Fundamentals of Semiconductors: Physics and Materials Properties, Editore: Springer, Anno edizione: 2010, ISBN: 978-3-642-00710-1
Marius Grundmann, The Physics of Semiconductors: An Introduction including Nanophysics and Applications, Editore: Springer, Anno edizione: 2010, ISBN: 978-3-642-13884-3
Tipo Forma Didattica
Ore di attività svolte in aula
Ore di studio autonome
Laboratorio Di Progetto
Informazioni in lingua inglese a supporto dell'internazionalizzazione
Insegnamento erogato in lingua
Disponibilità di materiale didattico/slides in lingua inglese
Disponibilità di libri di testo/bibliografia in lingua inglese
Possibilità di sostenere l'esame in lingua inglese
Disponibilità di supporto didattico in lingua inglese