Ing Ind - Inf (Mag.)(ord. 270) - MI (486) ENGINEERING PHYSICS - INGEGNERIA FISICA
097606 - GRAPHENE NANOELECTRONICS
054858 - GRAPHENE NANOELECTRONICS AND NANOFABRICATION
097516 - GRAPHENE AND NANOELECTRONIC DEVICES [I.C.]
The course is focused on the extraordinary physical properties of graphene (and related 2D materials) and their application in the development of nanoelectronic devices. The main goal of the course is to provide a comprehensive understanding of the physics of the state-of-the-art graphene electronic devices and realistically evaluate possible applications of graphene in modern electronics. The course also presents the state-of-the-art methods for the fabrication of electronic devices at the nanoscale providing the comprehensive understanding of the nanofabrication methods used both in industry and research laboratories.
Risultati di apprendimento attesi
- Knowledge and understanding
The students will learn about the main physical properties of graphene and related two-dimensional (2D) materials and how they can be exploited to realize 2D electronic devices.
The students will learn about the state-of-the-art technologies for the fabrication of nanostructures and how they can be used to fabricate electronic devices at the nanoscale for applications in research and industry.
- Apply knowledge and understanding
The students will be able to extract important parameters and figures of merit of field-effect transistors (FETs) based on graphene and related 2D materials, both in dc and at high-frequencies.
The students will be able to evaluate the performance of FETs made of 2D and conventional semiconductor materials.
The students will be able to understand advantages and disadvantages of 2D FETs with respect to conventional Si transistor technology.
The students will be able to design a process flow for the fabrication of electronic devices at the nanoscale.
- Making judgements
The students will have the ability to compare different transistor technologies in terms of their applications in electronics.
The students will have the ability to select appropriate applications in electronics for FETs based on graphene and related 2D materials.
The students will have the ability to compare different nanofabrication techniques in terms of throughput, resolution, and possible applications in electronics.
- Lifelong learning skills
The students will be capable to autonomously learn how to use novel 2D and nanostructured materials in the development of transistors and electronic circuits.
The students will be capable to autonomously learn the features of new nanofabrication techniques.
The students will be prepared to begin a masters' thesis project in a semiconductor research laboratory.
Introduction to carbon-based material
Allotropes and hybridization of carbon
Band structure and massless Dirac fermions in graphene
The origin of high charge carrier mobility in graphene
Comparison with carbon nanotubes
Klein paradox and half-integer quantum Hall effect
Methods for the synthesis of graphene
Graphene field-effect transistors (FETs)
The importance of high carrier mobility in electronic devices and circuits
Physics of graphene devices
Comparison between graphene and conventional FETs
Ambipolarity of graphene FETs
Electrostatic doping in graphene electronic circuits
The importance of drain current saturation and voltage gain
Impact of contact resistance on the properties of graphene FETs
Scaling and short-channel effects
Related 2D materials (e.g., MoS2)
Impact of band gap opening in graphene on FET properties
Small-signal model of graphene FETs
Low-frequency AC small signal model of FETs (hybrid-pi model)
Determination of transconductance gm and output conductance gd
Voltage and current gain
Definition of voltage and current gains
Intrinsic voltage gain gm/gd and intrinsic current gain h21
High-frequency model of graphene FETs
Extrinsic high-frequency model of FETs
Phasors in electronic circuits
h and Y parameter models of two-port networks
Cutoff frequency fT of graphene FETs
Cutoff frequency from Y parameters
Intrinsic and extrinsic cutoff frequency fT of graphene FETs
Comparison of graphene and conventional FETs in terms of fT
Power gain and maximum frequency of oscillation fmax of graphene FETs
Definition of power gain
Intrinsic and extrinsic maximum frequency of oscillation fmax of graphene FETs
Comparison of graphene and conventional FETs in terms of fmax
S parameters of two-port networks
Graphene electronic circuits
Voltage gain and multi-stage circuits
Static and dynamic power dissipation
Graphene electronic circuits: amplifiers, mixers, frequency multipliers, logic gates
Realistic gate delays and graphene ring oscillators
Introduction to lithography
Deep ultraviolet lithography
Resolution enhancement technologies
Extreme ultraviolet lithography
Electron beam lithography
Alternative lithographic technologies
Nanofabrication of graphene nanoelectronic devices and circuits
The student will benefit from having already completed some courses in solid-state physics, for example Solid State Physics (096033) and Electronics (096032). However, this is not obligatory.
Modalità di valutazione
The student will be evaluated by written examination according to the calendar of the course.
The student will be expected to discuss the physical phenomena underlying applications of graphene in electronics, solve basic (i.e., single-transistor) electronic circuits with graphene, extract transistor parameters and determine corresponding figures of merit.
Luis E. F. Foa Torres, Stephan Roche, Jean-Christophe Charlier, Introduction to Graphene-Based Nanomaterials - From Electronic Structure to Quantum Transport, Anno edizione: 2014, ISBN: 9781107030831
Juin J. Liou, Frank Schwierz, Hei Wong, Nanometer CMOS, Anno edizione: 2010, ISBN: 9814241083
Zheng Cui, Nanofabrication - Principles, Capabilities and Limits, Anno edizione: 2008, ISBN: 9780387755762
Tipo Forma Didattica
Ore di attività svolte in aula
Ore di studio autonome
Laboratorio Di Progetto
Informazioni in lingua inglese a supporto dell'internazionalizzazione
Insegnamento erogato in lingua
Disponibilità di materiale didattico/slides in lingua inglese
Disponibilità di libri di testo/bibliografia in lingua inglese
Possibilità di sostenere l'esame in lingua inglese
Disponibilità di supporto didattico in lingua inglese