Ing Ind - Inf (Mag.)(ord. 270) - MI (486) ENGINEERING PHYSICS - INGEGNERIA FISICA

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A

ZZZZ

097606 - GRAPHENE NANOELECTRONICS

054858 - GRAPHENE NANOELECTRONICS AND NANOFABRICATION

097516 - GRAPHENE AND NANOELECTRONIC DEVICES [I.C.]

Obiettivi dell'insegnamento

The course is focused on the extraordinary physical properties of graphene (and related 2D materials) and their application in the development of nanoelectronic devices. The main goal of the course is to provide a comprehensive understanding of the physics of the state-of-the-art graphene electronic devices and realistically evaluate possible applications of graphene in modern electronics. The course also presents the state-of-the-art methods for the fabrication of electronic devices at the nanoscale providing the comprehensive understanding of the nanofabrication methods used both in industry and research laboratories.

Risultati di apprendimento attesi

- Knowledge and understanding

The students will learn about the main physical properties of graphene and related two-dimensional (2D) materials and how they can be exploited to realize 2D electronic devices.

The students will learn about the state-of-the-art technologies for the fabrication of nanostructures and how they can be used to fabricate electronic devices at the nanoscale for applications in research and industry.

- Apply knowledge and understanding

The students will be able to extract important parameters and figures of merit of field-effect transistors (FETs) based on graphene and related 2D materials, both in dc and at high-frequencies.

The students will be able to evaluate the performance of FETs made of 2D and conventional semiconductor materials.

The students will be able to understand advantages and disadvantages of 2D FETs with respect to conventional Si transistor technology.

The students will be able to design a process flow for the fabrication of electronic devices at the nanoscale.

- Making judgements

The students will have the ability to compare different transistor technologies in terms of their applications in electronics.

The students will have the ability to select appropriate applications in electronics for FETs based on graphene and related 2D materials.

The students will have the ability to compare different nanofabrication techniques in terms of throughput, resolution, and possible applications in electronics.

- Lifelong learning skills

The students will be capable to autonomously learn how to use novel 2D and nanostructured materials in the development of transistors and electronic circuits.

The students will be capable to autonomously learn the features of new nanofabrication techniques.

The students will be prepared to begin a masters' thesis project in a semiconductor research laboratory.

Argomenti trattati

Introduction to carbon-based material

Allotropes and hybridization of carbon

Band structure and massless Dirac fermions in graphene

The origin of high charge carrier mobility in graphene

Comparison with carbon nanotubes

Klein paradox and half-integer quantum Hall effect

Methods for the synthesis of graphene

Graphene field-effect transistors (FETs)

The importance of high carrier mobility in electronic devices and circuits

Physics of graphene devices

Comparison between graphene and conventional FETs

Ambipolarity of graphene FETs

Electrostatic doping in graphene electronic circuits

The importance of drain current saturation and voltage gain

Impact of contact resistance on the properties of graphene FETs

Scaling and short-channel effects

Related 2D materials (e.g., MoS_{2})

Impact of band gap opening in graphene on FET properties

Small-signal model of graphene FETs

Low-frequency AC small signal model of FETs (hybrid-pi model)

Determination of transconductance g_{m} and output conductance g_{d}

Voltage and current gain

Definition of voltage and current gains

Intrinsic voltage gain g_{m}/g_{d} and intrinsic current gain h_{21}

High-frequency model of graphene FETs

Extrinsic high-frequency model of FETs

Phasors in electronic circuits

Two-port networks

h and Y parameter models of two-port networks

Cutoff frequency f_{T} of graphene FETs

Cutoff frequency from Y parameters

Intrinsic and extrinsic cutoff frequency f_{T} of graphene FETs

Comparison of graphene and conventional FETs in terms of f_{T}

Power gain and maximum frequency of oscillation f_{max} of graphene FETs

Definition of power gain

Intrinsic and extrinsic maximum frequency of oscillation f_{max} of graphene FETs

Comparison of graphene and conventional FETs in terms of f_{max}

S parameters of two-port networks

Graphene electronic circuits

Moore’s law

Voltage gain and multi-stage circuits

Noise margin

Static and dynamic power dissipation

Graphene electronic circuits: amplifiers, mixers, frequency multipliers, logic gates

Realistic gate delays and graphene ring oscillators

Nanodevice Fabrication

Introduction to lithography

Deep ultraviolet lithography

Resolution enhancement technologies

Extreme ultraviolet lithography

Electron beam lithography

Alternative lithographic technologies

Pattern transfer

Nanofabrication of graphene nanoelectronic devices and circuits

Prerequisiti

The student will benefit from having already completed some courses in solid-state physics, for example Solid State Physics (096033) and Electronics (096032). However, this is not obligatory.

Modalità di valutazione

The student will be evaluated by written examination according to the calendar of the course.

The student will be expected to discuss the physical phenomena underlying applications of graphene in electronics, solve basic (i.e., single-transistor) electronic circuits with graphene, extract transistor parameters and determine corresponding figures of merit.

Bibliografia

Luis E. F. Foa Torres, Stephan Roche, Jean-Christophe Charlier, Introduction to Graphene-Based Nanomaterials - From Electronic Structure to Quantum Transport, Anno edizione: 2014, ISBN: 9781107030831
Juin J. Liou, Frank Schwierz, Hei Wong, Nanometer CMOS, Anno edizione: 2010, ISBN: 9814241083
Zheng Cui, Nanofabrication - Principles, Capabilities and Limits, Anno edizione: 2008, ISBN: 9780387755762

Forme didattiche

Tipo Forma Didattica

Ore di attività svolte in aula

(hh:mm)

Ore di studio autonome

(hh:mm)

Lezione

32:30

48:45

Esercitazione

17:30

26:15

Laboratorio Informatico

0:00

0:00

Laboratorio Sperimentale

0:00

0:00

Laboratorio Di Progetto

0:00

0:00

Totale

50:00

75:00

Informazioni in lingua inglese a supporto dell'internazionalizzazione

Insegnamento erogato in lingua
Inglese

Disponibilità di materiale didattico/slides in lingua inglese

Disponibilità di libri di testo/bibliografia in lingua inglese

Possibilità di sostenere l'esame in lingua inglese

Disponibilità di supporto didattico in lingua inglese