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Risorsa bibliografica obbligatoria
Risorsa bibliografica facoltativa
Scheda Riassuntiva
Anno Accademico 2018/2019
Scuola Scuola di Ingegneria Industriale e dell'Informazione
Insegnamento 095155 - ELECTRON DEVICES
Docente Monzio Compagnoni Christian
Cfu 10.00 Tipo insegnamento Monodisciplinare

Corso di Studi Codice Piano di Studio preventivamente approvato Da (compreso) A (escluso) Insegnamento
Ing Ind - Inf (Mag.)(ord. 270) - MI (476) ELECTRONICS ENGINEERING - INGEGNERIA ELETTRONICA*AZZZZ095155 - ELECTRON DEVICES
Ing Ind - Inf (Mag.)(ord. 270) - MI (486) ENGINEERING PHYSICS - INGEGNERIA FISICA*AZZZZ095155 - ELECTRON DEVICES

Obiettivi dell'insegnamento

The course aims to present an in-depth analysis of the most important devices used in modern electronics, focusing on the CMOS and the bipolar technology. Starting from the basic physics and the working principles of the devices, the course comes to discuss second-order effects impacting their performance in deca-nanometer technologies, addressing possible optimization rules.


Risultati di apprendimento attesi

After this course, the student will be able to:

- understand the basic physics and the working principles of the most relevant electron devices used in modern electronics

- identify the physical processes that are relevant for the operation of the electron devices dealt with, model these processes quantitatively, address the impact of the choice of device parameters on these processes and on the resulting device performance

- understand the evolution of integrated technologies and of device design 

- discuss problems related to integrated electronic technologies with clarity, using technical terms and with a solid physical and mathematical background in the field

- develop critical-thinking skills in the field of semiconductor devices that will let him address the study even of devices not dealt with during the course


Argomenti trattati

1) Review of basic properties of semiconductor materials

Energy bands in a semiconductor material, energy-gap dependence on temperature, density of states. Thermodynamic equilibrium: Fermi-Dirac and Maxwell-Boltzmann statistics, Fermi level, charge-carrier concentration. Drift and diffusion of charge carriers, current transport, resistivity and sheet resistivity. Electrostatic potential in semiconductors: the non-linear Poisson equation, Debye length. Non-equilibrium conditions: quasi-Fermi levels, continuity equations, dielectric relaxation time, Shockley-Read-Hall theory for carrier generation/recombination via defect-assisted processes.

2) Two-terminal integrated devices

p-n junction:Device electrostatics under thermodynamic equilibrium: band diagram, built-in potential, electric field profile. Forward and reverse bias: band diagram, quasi-Fermi levels, potential drops and current components along the junction. Shockley ideal-diode equation. Wide-base and narrow-base diodes. Generation/recombination currents in the space-charge region. High injection levels and impact of the resistance of the quasi-neutral regions on the diode I-V curve. Gummel plot. Temperature dependence of the diode current-voltage characteristics. Small-signal model of the p-n junction.

Metal/semiconductor junction:

Electrostatic analysis under equilibrium and non-equilibrium conditions. Current transport: Schottky's diffusion theory, Bethe's thermionic-emission theory, thermionic-emission-diffusion theory. Schottky effect. Tunneling ohmic contacts. Effect of interface states on the band diagram of the junction.

MOS capacitor:

The MOS system: band diagram under equilibrium and in presence of an external gate bias. Working regimes of the device as a function of the gate bias. Calculation of the substrate charge vs. surface potential relation from the Poisson equation. Surface potential and substrate charge as a function of the gate bias. Weak inversion: exponential growth of the inversion charge in the channel with the gate bias. Strong inversion: estimation of the thickness of the inversion layer. Capacitance of an MOS structure: dependence on the gate bias and on the measurement frequency. Polysilicon gate: technological benefits, electrostatic drawbacks and impact on the threshold voltage of an n-MOS and of a p-MOS. MOS capacitor with ring: impact of the ring bias on device electrostatics, on threshold voltage and on the C-V curve. Oxide charge and interface states: impact on the C-V curve. 

3) Transistors

MOSFET:

Long-channel MOSFETs: gradual-channel approximation, electrostatic analysis and calculation of the drain current. Current-voltage characteristics of a long-channel MOSFET above threshold; pinch-off condition at the drain. Small-signal model of the transistor and carrier transit time in the channel. Subthreshold conduction. Body effect. Temperature dependence of the transistor electrical parameters. Output resistance and channel length modulation. Short-channel MOSFET: electrostatics, short-channel effect, DIBL. Velocity saturation along the channel: mobility dependence on the longitudinal and transverse electric field, impact on the current-voltage characteristics of the device. MOSFET scaling: constant-field scaling and generalized scaling. Limits to constant-field scaling: subthreshold current and OFF-state power dissipation, silicon energy gap, short-channel effects, parasitic effects. Tox-Wdmax space for the design of scaled MOSFETs. Emerging scaling issues: statistical variability, leakage currents. 

Bipolar junction transistor:

Structure, working principles and band diagram. Electric field in the quasi-neutral region of the base: non-uniform doping, high injection and parasitic resistance. Collector current in presence of non-uniform base doping, band-gap narrowing and SiGe base. Base current. Impact of the emitter and base parasitic resistances on the collector and base current. Dependence of beta on the collector current: drop of beta at high currents, Kirk effect, modulation of base conductivity; drop of beta at low currents, carrier recombination in the base/emitter depletion layer. Current-voltage characteristics of the BJT: saturation regime and forward-active regime. Early effect. Small-signal model of the BJT. Frequency response, cut-off frequency and its dependence on the collector current. Forward transit time. Advanced BJTs: polysilicon emitter and SiGe base. 

 


Prerequisiti

- Electrostatics

- Fundamentals of semiconductors

- Basic mathematics


Modalità di valutazione

The exam consists in an oral discussion. During the exam, the student must prove his understanding of the subjects dealt with during the course, his ability to clearly organize a technical exposition, his critical-thinking skills.


Bibliografia
Risorsa bibliografica facoltativaY. Taur, T. H. Ning, Fundamentals of modern VLSI devices, Editore: Cambridge Univ. Press, Anno edizione: 2009, ISBN: 978-0-521-83294-6
Note:

2nd ed.


Forme didattiche
Tipo Forma Didattica Ore di attività svolte in aula
(hh:mm)
Ore di studio autonome
(hh:mm)
Lezione
65:00
97:30
Esercitazione
35:00
52:30
Laboratorio Informatico
0:00
0:00
Laboratorio Sperimentale
0:00
0:00
Laboratorio Di Progetto
0:00
0:00
Totale 100:00 150:00

Informazioni in lingua inglese a supporto dell'internazionalizzazione
Insegnamento erogato in lingua Inglese
Disponibilità di libri di testo/bibliografia in lingua inglese
Possibilità di sostenere l'esame in lingua inglese
schedaincarico v. 1.6.1 / 1.6.1
Area Servizi ICT
06/04/2020