Semiconductors for electron devices: Ge, Si, SiC, GaAs/AlGaAs, GaN/AlGaN, CdTe, CdZnTe: physical parameters, applications.
Transistors: BJT, JFET, MOSFET, MESFET and HEMT transistors: static and dynamic characteristics and parameters.
Sensors: Mechanical, magnetic, thermal and chemical sensors. CCD and CMOS photon sensors, semiconductor radiation detectors (infrared, UV, X and gamma rays). Acoustic sensors and microphones: sensitivity, directionality, frequency response, dynamic range, noise, impedance. Professional microphones. MEMS technology.
Noise in electron devices and circuits: Physical origin of the electronic noise, noise power spectral density, r.m.s. values, Signal/Noise ratio, thermal, shot, 1/f and Lorentzian noises. Noise characteristics and modeling of Resistors, Diodes, BJT, JFET, MOSFET;MESFET, HEMT. Noise in Operational Amplifier. Noise analysis of multi-stage amplifiers.
Electronic circuits for analog signal processing: Differential and instrumentation amplifiers, design of low-noise preamplifiers, wide-bandwidth amplifiers, audio amplifiers, variable gain amplifiers, voltage controlled amplifiers (VCA), active filters, mixers, equalizers. Analysis of a complex system for audio signals processing: a professional console. Front-end electronics for sensor readout. Application Specific Integrated Circuits.
Power Electronics: Si, SiC and GaN power devices. Converters.
Experimental Laboratory: experimental workshop on a multi-stage signal processing system.