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Risorsa bibliografica obbligatoria
Risorsa bibliografica facoltativa
Scheda Riassuntiva
Anno Accademico 2018/2019
Scuola Scuola di Ingegneria Industriale e dell'Informazione
Insegnamento 097512 - PHYSICS OF SEMICONDUCTOR NANOSTRUCTURES [I.C.]
  • 097510 - PHYSICS OF SEMICONDUCTORS
Docente Ferragut Rafael Omar
Cfu 5.00 Tipo insegnamento Modulo Di Corso Strutturato

Corso di Studi Codice Piano di Studio preventivamente approvato Da (compreso) A (escluso) Insegnamento
Ing Ind - Inf (Mag.)(ord. 270) - MI (486) ENGINEERING PHYSICS - INGEGNERIA FISICA*AZZZZ097604 - PHYSICS OF SEMICONDUCTORS
097512 - PHYSICS OF SEMICONDUCTOR NANOSTRUCTURES [I.C.]

Obiettivi dell'insegnamento

The aim of this course is to describe some relevant aspects on the Physics of semiconductor devices and the limitations of them.


In particular, the characteristics of the more important semiconductor crystal structures will be presented. Some deposition techniques will be given, as well as information about the more common commercial substrates. In addition, some concepts on the diffusion of impurities and semiconductor alloys will be covered.
Several kind of crystalline defects will be presented for the more relevant semiconductor families. As well as, defects associated to the interfaces wil be also studied.
Finally, properties and characteristics of transparent oxides and semiconductors will presented taking into account the current and upcoming applications.


Risultati di apprendimento attesi

After completion of the course the students will know:
  i. the semiconductor structures and the fabrication and commercial aviability;
 ii. the limitations and tailoring of the semiconductors in term of defects and impurities;
iii. the new tendencies of the tradicional semiconductors, as well as the current and upcoming applicationstrans of transparent semiconductors and oxides.


Argomenti trattati

Structural bulk properties
Crystal structure: lattice, important crystal structures (diamond, zinc-blende, amorphous semiconductors), crystal growth. Deposition techniques. Commercial substrates. Reciprocal space. Fermi surface: calculation and experimental determination. Solute and impurities diffusion. Semiconductor alloys.

Defects in semiconductors
Defects. Point defects: vacancies, Interstitials and substitutional atoms. Impurities. Experimental determinations. Dislocations: Burger vector, dislocation geometry (edge, screw, mixed, partial). Extended defects. Disorder. Shallow defects (Si, Ge and GaAs). Deep defects (Negative-U Center, EL2, DX). Jahn–Teller Effect. Surface charges and dipoles. Defects associated to the interfaces. Non-ideal p-n junction and metal/semiconductor interface (Schottky barrier).

Crystal structures and defects in transparent semiconductors
Structure, defects and properties of transparent oxides and semiconductors (GaN, ZnO and TiO2). Amorphous films (IGZO).  Current and upcoming applications: TFT transistors, displays, solar cells, etc.


Prerequisiti

The student will benefit of a background knowledge of solid state Physics and quantum mechanics.


Modalità di valutazione

Students will be evaluated by means of oral examination.

The oral exam is aimed at assessing the capability of the student to:

-describe semiconductor structures and fabrication methods;

-discuss the limitations and tailoring of the semiconductors in term of defects and impurities;

-be aware of new applications of  semiconductors, as well as of current and upcoming applications of transparent semiconductors and oxides.


Bibliografia
Risorsa bibliografica facoltativaPeter Y. Yu and Manuel Cardona, Fundamentals of Semiconductors: Physics and Materials Properties, Editore: Springer, Anno edizione: 2010, ISBN: 978-3-642-00710-1
Risorsa bibliografica facoltativaMarius Grundmann, The Physics of Semiconductors: An Introduction including Nanophysics and Applications, Editore: Springer, Anno edizione: 2010, ISBN: 978-3-642-13884-3

Software utilizzato
Nessun software richiesto

Forme didattiche
Tipo Forma Didattica Ore di attività svolte in aula
(hh:mm)
Ore di studio autonome
(hh:mm)
Lezione
32:30
48:45
Esercitazione
17:30
26:15
Laboratorio Informatico
0:00
0:00
Laboratorio Sperimentale
0:00
0:00
Laboratorio Di Progetto
0:00
0:00
Totale 50:00 75:00

Informazioni in lingua inglese a supporto dell'internazionalizzazione
Insegnamento erogato in lingua Inglese
Disponibilità di materiale didattico/slides in lingua inglese
Disponibilità di libri di testo/bibliografia in lingua inglese
Possibilità di sostenere l'esame in lingua inglese
Disponibilità di supporto didattico in lingua inglese
schedaincarico v. 1.8.2 / 1.8.2
Area Servizi ICT
09/06/2023