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Bibliography mandatory
Bibliography not mandatory
Summary Teaching Assignment
Academic Year 2018/2019
School School of Industrial and Information Engineering
Course 095379 - MICROELECTRONIC TECHNOLOGIES
Cfu 5.00 Type of Course Mono-Disciplinary Course
Lecturers: Titolare (Co-titolari) Mariani Marcello

Programme Track From (included) To (excluded) Course
Ing Ind - Inf (Mag.)(ord. 270) - MI (471) BIOMEDICAL ENGINEERING - INGEGNERIA BIOMEDICA*AZZZZ095379 - MICROELECTRONIC TECHNOLOGIES
Ing Ind - Inf (Mag.)(ord. 270) - MI (476) ELECTRONICS ENGINEERING - INGEGNERIA ELETTRONICA*AZZZZ095379 - MICROELECTRONIC TECHNOLOGIES
Ing Ind - Inf (Mag.)(ord. 270) - MI (486) ENGINEERING PHYSICS - INGEGNERIA FISICA*AZZZZ095379 - MICROELECTRONIC TECHNOLOGIES

Goals

The course illustrates the unit processes needed to realize an integrated circuit on silicon substrates. Beside acquiring familiarity with the unit processes physics and tools, the students will also learn how to arrange those basic steps  into a process flow sequence. A simple CMOS circuit as well as a state of the art flash memory process flow will be analyzed.


Expected learning outcomes

Knowledge and undertsanding:

After the course, the students will:

-Know the basic unit processes for an integrated circuit fabrication

-Understand the physics of the single process steps

-Understand the role of each process step in a CMOS and in a memory process flow

Applying knowledge and understanding:

After the course, the students will:

-Be able to choose the best technique for each unit process step, based on the technology node and process flow requirements

-Understand how unit process properties must evolve as a function of technology node scaling

-Be able to predict the impact of a unit process step on the whole device process flow and on a device electrical performances


Topics
  • Introduction
-Semiconductor industry history
-Semiconductor physics review
 
  • Process flow (1)
-Process flow for a CMOS device
 
  • Silicon
- Crystallography review (Bravais lattice, crystalline structures)
-Silicon lattice
- Defects and thermodynamics of point defects
-Mono-crystalline silicon growth (CZ)
-Silicon wafer fabrication process
 
  • Silicon oxidation
- Silicon oxide structure
- Deal and Grove model
-Oxidation kinetic dependence on substrate orientation and doping
- Oxidation and point defects
- Charged defects in silicon oxide and CV measurements
- Advanced silicon oxidation techniques
- High-k dielectrics
 
  • Dopant diffusion in silicon
- Fick’s law
- Analytical solutions to second Fick’s law (Gaussian and ERFC profiles)
- Correction to Fick’s law
- Diffusion and point defects
 
  • Ion implantation
- Ion implanter structure
- Implanted concentration profiles, channeling effects
- Nuclear and electronic ion stopping
- Crystallographic damage and TED
 
  • Lithography
-Projection lithography;
- Resolution and depth of focus
-Steppers e scanners;
-Masks and photo-resist
-Advanced applications (immersion lithography, EUV, e-beam) Deposizione di film sottili (CVD)
 
·                     Thin films deposition: CVD and PVD techniques
-Fluid dynamics basics
-APCVD and LPDCVD basic models
-Plasma-assisted CVD techniques
-Evaporation
-Sputtering
 
  • Etching
-Wet etching quick overview
-Plasma ecthing
 Main properties
 Plasma etchers
 Etch chemistries
Basic models
 
  • Interconnects
- Local interconnects: silicides and salicides
- Contacts
*Ohmic vs rectifying behavior
*Main contact technologies
- Dielectrics: oxides and low-K materials
- Interconnects: subtractive and damascene approach
 
·                     NOR flash memory process flow
 
 
Text book
James D. Plummer, Michael D. Deal, Peter B. griffin, Silicon VLSI Technology. Fundamentals, Practice and Modeling, Prentice Hall, 2000, ISBN: 0130850373

Pre-requisites
 

Assessment
The final exam consists of  an oral interview (NO WRITTEN TEST).

Bibliography
Risorsa bibliografica obbligatoriaJames D. Plummer, Michael Deal, Peter D. Griffin, Silicon VLSI Technology: Fundamentals, Practice, and Modeling , Editore: Prentice Hall, Anno edizione: 2001

Software used
No software required

Learning format(s)
Type of didactic form Ore di attività svolte in aula
(hh:mm)
Ore di studio autonome
(hh:mm)
Lesson
32:30
48:45
Training
17:30
26:15
Computer Laboratory
0:00
0:00
Experimental Laboratory
0:00
0:00
Project Laboratory
0:00
0:00
Total 50:00 75:00

Information in English to support internationalization
Course offered in English
Study material/slides available in English
Textbook/Bibliography available in English
It is possible to take the examination in English
Support available in English
schedaincarico v. 1.10.0 / 1.10.0
Area Servizi ICT
15/07/2024