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Risorse bibliografiche
Risorsa bibliografica obbligatoria
Risorsa bibliografica facoltativa
Scheda Riassuntiva
Anno Accademico 2015/2016
Scuola Scuola di Ingegneria Industriale e dell'Informazione
Insegnamento 097516 - GRAPHENE AND NANOELECTRONIC DEVICES [I.C.]
  • 097515 - NANODEVICE CHARACTERIZATION
Docente Chrastina Daniel
Cfu 5.00 Tipo insegnamento Modulo Di Corso Strutturato

Corso di Studi Codice Piano di Studio preventivamente approvato Da (compreso) A (escluso) Insegnamento
Ing Ind - Inf (Mag.)(ord. 270) - MI (486) ENGINEERING PHYSICS - INGEGNERIA FISICA*AZZZZ097607 - NANODEVICE FABRICATION AND CHARACTERIZATION
097516 - GRAPHENE AND NANOELECTRONIC DEVICES [I.C.]

Programma dettagliato e risultati di apprendimento attesi

As modern technology moves ever further into the nanoscale, it becomes essential to extend fundamental solid-state physics knowledge to systems of reduced dimensionality. The tools developed to understand charge transport in high mobility 2-dimensional systems, such as semiconductor heterostructures and graphene sheets, focus on the behaviour of electrons in solids in electric and magnetic fields. The study of the rich physics seen in these systems at low temperatures and high magnetic fields allows an understanding to be developed of state-of-the-art devices operating under everyday conditions, which is fundamental to the development of future technology.

 

The first part of the course is focused on the methods of understanding and measuring the behaviour of electrons and holes in state-of-the-art semiconductor structures and devices. Charge transport in quantum confined heterostructures will be explored in terms of the following systems:

 

  • Linear transport theory: scattering mechanisms and screening, quantum and transport lifetimes.
  • The Boltzmann equation: electrical and thermal conductivity and thermoelectric processes.
  • 2-dimensional carrier gases: ballistic transport, high electron mobility transistors.
  • Weak magnetic fields at low temperature: weak localization.
  • Strong magnetic fields at low temperature: Landau levels, Shubnikov-de Haas oscillations, and the quantum Hall effect.
  • Strong magnetic fields at room temperature: parallel conduction channels and the mobility spectrum.
  • Vertical transport devices: the transfer matrix treatment of resonant tunnel diodes.

 

The second part covers methods of obtaining physical and structural information at the nanoscale. The following characterization methods will be explored:

 

  • X-ray diffraction of thin films.
  • High-resolution x-ray diffraction.
  • Nanofocused x-ray beams at synchrotron light sources.
  • Raman and micro-Raman spectroscopy in semiconductors.
  • Tip-enhanced Raman spectroscopy.
  • Micro-photoluminescence.

 

This course runs in parallel with, and is complementary to, the Physics of Semiconductor Nanostructures integrated course, while many of the concepts in both parts of this course will provide background to the second part of the integrated Graphene and Nanoelectronic Devices course, Graphene Nanoelectronics.


Note Sulla Modalità di valutazione

Students will be evaluated by oral examination.


Bibliografia
Risorsa bibliografica facoltativaNeil W. Ashcroft, N. David Mermin, Solid State Physics, Editore: Harcourt Brace College Publishers, Anno edizione: 1976, ISBN: 0-03-049346-3
Risorsa bibliografica facoltativaJohn H. Davis, The Physics of Low-Dimensional Semiconductors, Editore: Cambridge University Press, Anno edizione: 2005, ISBN: 0-521-48491-X

Mix Forme Didattiche
Tipo Forma Didattica Ore didattiche
lezione
28.0
esercitazione
18.0
laboratorio informatico
0.0
laboratorio sperimentale
4.0
progetto
0.0
laboratorio di progetto
0.0

Informazioni in lingua inglese a supporto dell'internazionalizzazione
Insegnamento erogato in lingua Inglese
Disponibilità di materiale didattico/slides in lingua inglese
Disponibilità di libri di testo/bibliografia in lingua inglese
Possibilità di sostenere l'esame in lingua inglese
Disponibilità di supporto didattico in lingua inglese
schedaincarico v. 1.6.5 / 1.6.5
Area Servizi ICT
16/06/2021