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Risorse bibliografiche
Risorsa bibliografica obbligatoria
Risorsa bibliografica facoltativa
Scheda Riassuntiva
Anno Accademico 2015/2016
Scuola Scuola di Ingegneria Industriale e dell'Informazione
Insegnamento 097512 - PHYSICS OF SEMICONDUCTORS NANOSTRUCTURES [I.C.]
Docente Ferragut Rafael Omar , Isella Giovanni
Cfu 10.00 Tipo insegnamento Corso Integrato

Corso di Studi Codice Piano di Studio preventivamente approvato Da (compreso) A (escluso) Insegnamento
Ing Ind - Inf (Mag.)(ord. 270) - MI (486) ENGINEERING PHYSICS - INGEGNERIA FISICA*AZZZZ097605 - SEMICONDUCTOR NANOSTRUCTURES
097512 - PHYSICS OF SEMICONDUCTORS NANOSTRUCTURES [I.C.]
097604 - PHYSICS OF SEMICONDUCTORS

Programma dettagliato e risultati di apprendimento attesi

Course Description

This course outlines the physics and technology of devices exploiting quantum confinement of electronic states in semiconductors. Topics include: a) alignment of electronic states at the interface between two different semiconductors (heterostructures) b) strain effects in semiconductors c) electronic properties of low-dimensional semiconductors.

Program

Semiconductor bandstructure

Bandstructure of group IV and compound (III-V, II-VI) semiconductors. Tight binding model of the bandstructure. Bandgap dependence on the lattice parameter. Symmetry of conduction (valence) band minima (maxima). Effective mass approximation and effective mass tensor. Cyclotron resonance measurements.

Bandstructure modification and control

Semiconductor alloys. band‑offset in heterostructures, type I , II and III band‑alignment. Experimental determination of band‑offsets by X-ray photoelectron spectroscopy. Lattice mismatch in heterostructures. Elastic strain in cubic semiconductors. Deformation potentials for hydrostatic and uniaxial strain. Quantum confinement effects. Strained silicon technology.

Charge transport in quantum confined heterostructures

2D-electron gas: high electro mobility transistors, Landau levels and the quantum Hall effect.Vertical transport devices: the transfer matrix treatment of resonant tunnel diodes.

Optoelectronic properties of quantum confined heterostructures

Selection rules for optical absorption in quantum wells and quantum dots. inter‑band and intra‑band absorption. Quantum well infra red detectors and quantum cascade lasers. The quantum confined Stark effect.

Structural bulk properties

Crystal structure: lattice, important crystal structures (diamond, zinc-blende, amorphous semiconductors), crystal growth. Deposition techniques. Commercial substrates. Reciprocal space. Fermi surface: calculation and experimental determination. Defects. Point defects: vacancies, Interstitials and substitutional atoms. Impurities. Experimental determinations. Dislocations: Burger vector, dislocation geometry (edge, screw, mixed, partial). Extended defects. Disorder. Deep centers. Green’s Function Method. Semiconductor alloys. Solute and impurities diffusion.

Interfaces in heterostructures

Changes of the band structure at the interface. Surface charges and dipoles. Defects associated to the interfaces. Non-ideal p-n junction (diodes). Recombination centers. Defects generation. Metal semiconductor interface. Schottky barrier and surface state effects. Space-charge region.

Properties of nanostructured transparent semiconductors.

Fundamentals of Transparent oxide semiconductors. Nanostructures ZnO, IGZO and TiO2 semiconductors. Thin-films transistors. Annealing of amorphous films. TFT devices. Current and upcoming applications: displays, biosensors, transparent solar cells, etc.

 

 


Note Sulla Modalità di valutazione

Students will be evaluated by oral examination.


Bibliografia
Risorsa bibliografica facoltativaJ. Singh, Electronic and optoelectronic properties of semiconductor structures, Editore: Cambridge, Anno edizione: 2003, ISBN: 0-521-03574-0
Risorsa bibliografica facoltativaJ. H. Davies, The physics of low-dimensional semiconductors, Editore: Cambridge, Anno edizione: 1998, ISBN: 978-0-521-48491-6
Risorsa bibliografica facoltativaPeter Y. Yu and Manuel Cardona, Fundamentals of Semiconductors: Physics and Materials Properties, Editore: Springer, Anno edizione: 2010, ISBN: 978-3-642-00710-1
Risorsa bibliografica facoltativaMarius Grundmann, The Physics of Semiconductors: An Introduction including Nanophysics and Applications, Editore: Springer, Anno edizione: 2010, ISBN: 978-3-642-13884-3

Mix Forme Didattiche
Tipo Forma Didattica Ore didattiche
lezione
56.0
esercitazione
36.0
laboratorio informatico
0.0
laboratorio sperimentale
8.0
progetto
0.0
laboratorio di progetto
0.0

Informazioni in lingua inglese a supporto dell'internazionalizzazione
Insegnamento erogato in lingua Inglese
Disponibilità di materiale didattico/slides in lingua inglese
Disponibilità di libri di testo/bibliografia in lingua inglese
Possibilità di sostenere l'esame in lingua inglese
Disponibilità di supporto didattico in lingua inglese
schedaincarico v. 1.6.5 / 1.6.5
Area Servizi ICT
20/06/2021