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Scheda Riassuntiva
Anno Accademico 2014/2015
Scuola Scuola di Ingegneria Industriale e dell'Informazione
Insegnamento 095379 - MICROELECTRONIC TECHNOLOGIES
Docente Mariani Marcello
Cfu 5.00 Tipo insegnamento Monodisciplinare

Corso di Studi Codice Piano di Studio preventivamente approvato Da (compreso) A (escluso) Insegnamento
Ing Ind - Inf (Mag.)(ord. 270) - MI (401) INGEGNERIA BIOMEDICA* AZZZZ095379 - MICROELECTRONIC TECHNOLOGIES
Ing Ind - Inf (Mag.)(ord. 270) - MI (419) INGEGNERIA ELETTRONICA* AZZZZ095379 - MICROELECTRONIC TECHNOLOGIES
Ing Ind - Inf (Mag.)(ord. 270) - MI (471) BIOMEDICAL ENGINEERING - INGEGNERIA BIOMEDICA* AZZZZ095379 - MICROELECTRONIC TECHNOLOGIES
Ing Ind - Inf (Mag.)(ord. 270) - MI (476) ELECTRONICS ENGINEERING - INGEGNERIA ELETTRONICA* AZZZZ095379 - MICROELECTRONIC TECHNOLOGIES

Programma dettagliato e risultati di apprendimento attesi
Microelectronic Technologies
 
The course illustrates the unit processes needed to realize an integrated circuit on silicon substrates. Beside acquiring familiarity with the unit processes physics and tools, the students will also learn how to arrange those basic steps  into a process flow sequence. A simple CMOS circuit as well as a state of the art flash memory process flow will be analyzed.
 
 
Detailed program
 
  • Introduction
-Semiconductor industry history
-Semiconductor physics review
 
  • Process flow (1)
-Process flow for a CMOS device
 
  • Silicon
- Crystallography review (Bravais lattice, crystalline structures)
-Silicon lattice
- Defects and thermodynamics of point defects
-Mono-crystalline silicon growth (CZ)
-Silicon wafer fabrication process
 
  • Silicon oxidation
- Silicon oxide structure
- Deal and Grove model
-Oxidation kinetic dependence on substrate orientation and doping
- Oxidation and point defects
- Charged defects in silicon oxide and CV measurements

- Advanced silicon oxidation techniques

- High-k dielectrics
 
  • Dopant diffusion in silicon
- Fick’s law
- Analytical solutions to second Fick’s law (Gaussian and ERFC profiles)
- Correction to Fick’s law
- Diffusion and point defects
 
  • Ion implantation
- Ion implanter structure
- Implanted concentration profiles, channeling effects

- Nuclear and electronic ion stopping

- Crystallographic damage and TED
 
  • Lithography
-Projection lithography;
- Resolution and depth of focus
-Steppers e scanners;
-Masks and photo-resist
-Advanced applications (immersion lithography, EUV, e-beam) Deposizione di film sottili (CVD)
 
·                     Thin films deposition: CVD and PVD techniques
-Fluid dynamics basics
-APCVD and LPDCVD basic models
-Plasma-assisted CVD techniques
-Evaporation
-Sputtering
 
  • Etching
-Wet etching quick overview
-Plasma ecthing

 Main properties

 Plasma etchers

 Etch chemistries

Basic models
 
  • Interconnects
- Local interconnects: silicides and salicides
- Contacts

*Ohmic vs rectifying behavior

*Main contact technologies

- Dielectrics: oxides and low-K materials

- Interconnects: subtractive and damascene approach
 
·                     NOR flash memory process flow
 
 
 
 
Text book
James D. Plummer, Michael D. Deal, Peter B. griffin, Silicon VLSI Technology. Fundamentals, Practice and Modeling, Prentice Hall, 2000, ISBN: 0130850373
 

Note Sulla Modalità di valutazione
Final exam
The final exam consists of a written test followed by an optional oral interview. The oral exam is compulsory if the written test score is  <21/30 or >28/30.

Bibliografia

Mix Forme Didattiche
Tipo Forma Didattica Ore didattiche
lezione
30.0
esercitazione
20.0
laboratorio informatico
0.0
laboratorio sperimentale
0.0
progetto
0.0
laboratorio di progetto
0.0

Informazioni in lingua inglese a supporto dell'internazionalizzazione
Insegnamento erogato in lingua Inglese
schedaincarico v. 1.6.5 / 1.6.5
Area Servizi ICT
20/06/2021